Sign In | Join Free | My tjskl.org.cn
China Guangzhou Topfast Technology Co., Ltd. logo
Guangzhou Topfast Technology Co., Ltd.
Best Service, Best PLC China's largest one-stop PLC sourcing centre
Active Member

3 Years

Home > Discrete Semiconductor Devices >

IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A

Guangzhou Topfast Technology Co., Ltd.
Contact Now

IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A

  • 1
  • 2

Brand Name : Infineon Technologies/International Rectifier IOR

Model Number : IRFB7440PBF IRFB4310PBF IRFB4115PBF

MOQ : 1 piece

Payment Terms : T/T

Delivery Time : 2~8 workdays

Brand : Infineon Technologies/International Rectifier IOR

Certificate : /

Model : IRFB7440PBF IRFB4310PBF IRFB4115PBF

MOQ : 1 pc

Price : Negotiated

Delivery : 2~8 workdays

Payment : T/T

Contact Now

Product Description

IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Transistors TO-220AB HEXFET FETs MOSFETs

Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs

---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A​

Description:
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification:

Category
Discrete Semiconductor Products
 
Transistors - FETs, MOSFETs - Single
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4340 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF1404


Product Tags:

FET HEXFET Power Mosfet

      

IRFB7440PBF HEXFET Power Mosfet

      

IRFB4310PBF

      
Quality IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A for sale

IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Guangzhou Topfast Technology Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)